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| Trench Sh IGBT Power Module (R) Phase Leg ee 4U t om .c APTGT75A120D1 VCES = 1200V IC = 75A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control w w ta a D . w Q1 4 5 Q2 6 7 3 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD SCSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Short Circuit Safe Operating Area w w .D w t a S a TC = 25C TC = 80C TC = 25C TC = 25C Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat e h t e U 4 .c m o V W Tj = 125C 300A@900V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com w w w .D a 1-3 APTGT75A120D1 - Rev 0 aS t ee h January, 2004 Max ratings 1200 110 75 175 20 357 Unit V A 4U t om .c APTGT75A120D1 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 3mA VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 75A Tj = 125C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A RG = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A RG = 4.7 Min 1200 Typ Max 4 2.1 6.5 300 Unit V mA V V nA 5.0 1.7 2.0 5.8 Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min Typ 5345 280 242 280 90 550 125 290 100 650 180 Max Unit nF ns ns Reverse diode ratings and characteristics Symbol Characteristic VF Erec Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 75A VGE = 0V IF = 75A VR = 600V di/dt =600A/s IF = 75A VR = 600V di/dt =600A/s Min Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C Typ 1.6 1.6 6 7 14 Max 2.1 Unit V mJ C Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight IGBT Diode Min Typ Max 0.35 0.58 150 125 125 3.5 5 180 Unit C/W 2500 -40 -40 -40 2 3 V C N.m g M5 M6 APT website - http://www.advancedpower.com 2-3 APTGT75A120D1 - Rev 0 January, 2004 APTGT75A120D1 Package outline APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 3-3 APTGT75A120D1 - Rev 0 APT reserves the right to change, without notice, the specifications and information contained herein January, 2004 |
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